First stable P type 2D semiconductor material: Tin Oxide

p type 2d material image

Great magic done by the Ashutosh Tiwari and his team, have discovered first stable p-type 2D semiconductor material at the University of Utah that opens the door for much speedier smartphones and computers. The semiconductor made of the element tin and oxygen, tin monoxide ( SnO) is a layer of 2D material only one atom thick, allows electrical charges like electrons to move through it at a faster speed than conventional 3D material such as silicon, germanium etc. [Photo:Dan Hixson/University of Utah College of Engineering] Researchers in theĀ field of engineering materials have discovered that new types of 2D material such Read More …